SQ1922EEH-T1_GE3
Modello di prodotti:
SQ1922EEH-T1_GE3
fabbricante:
Electro-Films (EFI) / Vishay
Descrizione:
MOSFET 2N-CH 20V SC70-6
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
54013 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
SQ1922EEH-T1_GE3.pdf

introduzione

We can supply SQ1922EEH-T1_GE3, use the request quote form to request SQ1922EEH-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQ1922EEH-T1_GE3.The price and lead time for SQ1922EEH-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQ1922EEH-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:1.5V @ 250µA
Contenitore dispositivo fornitore:SC-70-6
Serie:Automotive, AEC-Q101, TrenchFET®
Potenza - Max:1.5W
imballaggio:Cut Tape (CT)
Contenitore / involucro:6-TSSOP, SC-88, SOT-363
Altri nomi:SQ1922EEH-T1_GE3CT
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:50pF @ 10V
Carica Gate (Qg) (Max) @ Vgs:1.2nC @ 4.5V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Standard
Tensione drain-source (Vdss):20V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 20V 840mA (Tc) 1.5W Surface Mount SC-70-6
Corrente - Drain continuo (Id) @ 25 ° C:840mA (Tc)
Email:[email protected]

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