NVMFD5877NLWFT1G
NVMFD5877NLWFT1G
Modello di prodotti:
NVMFD5877NLWFT1G
fabbricante:
AMI Semiconductor / ON Semiconductor
Descrizione:
MOSFET 2N-CH 60V 6A SO8FL
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
40378 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
NVMFD5877NLWFT1G.pdf

introduzione

We can supply NVMFD5877NLWFT1G, use the request quote form to request NVMFD5877NLWFT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NVMFD5877NLWFT1G.The price and lead time for NVMFD5877NLWFT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NVMFD5877NLWFT1G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3V @ 250µA
Contenitore dispositivo fornitore:8-DFN (5x6) Dual Flag (SO8FL-Dual)
Serie:-
Rds On (max) a Id, Vgs:39 mOhm @ 7.5A, 10V
Potenza - Max:3.2W
imballaggio:Tape & Reel (TR)
Contenitore / involucro:8-PowerTDFN
Altri nomi:NVMFD5877NLWFT1G-ND
NVMFD5877NLWFT1GOSTR
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:50 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:540pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:20nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):60V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Corrente - Drain continuo (Id) @ 25 ° C:6A
Email:[email protected]

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