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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXFV16N80P
IXFV16N80P
Modello di prodotti:
IXFV16N80P
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 800V 16A PLUS220
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
25535 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IXFV16N80P.pdf
Inchiesta

introduzione

We can supply IXFV16N80P, use the request quote form to request IXFV16N80P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFV16N80P.The price and lead time for IXFV16N80P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFV16N80P.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 4mA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:PLUS220
Serie:HiPerFET™, PolarHT™
Rds On (max) a Id, Vgs:600 mOhm @ 500mA, 10V
Dissipazione di potenza (max):460W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-220-3, Short Tab
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:4600pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:71nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):800V
Descrizione dettagliata:N-Channel 800V 16A (Tc) 460W (Tc) Through Hole PLUS220
Corrente - Drain continuo (Id) @ 25 ° C:16A (Tc)
Email:[email protected]

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