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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXFK21N100Q
IXFK21N100Q
IXFK21N100Q
Modello di prodotti:
IXFK21N100Q
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 1000V 21A TO-264
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
24088 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IXFK21N100Q.pdf
Inchiesta

introduzione

We can supply IXFK21N100Q, use the request quote form to request IXFK21N100Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFK21N100Q.The price and lead time for IXFK21N100Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFK21N100Q.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5.5V @ 4mA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-264AA (IXFK)
Serie:HiPerFET™
Rds On (max) a Id, Vgs:500 mOhm @ 10.5A, 10V
Dissipazione di potenza (max):500W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-264-3, TO-264AA
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:14 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:6900pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:170nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):1000V
Descrizione dettagliata:N-Channel 1000V 21A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)
Corrente - Drain continuo (Id) @ 25 ° C:21A (Tc)
Email:[email protected]

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