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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXCP01N90E
IXCP01N90E
IXCP01N90E
Modello di prodotti:
IXCP01N90E
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 900V 0.25A TO-220
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
61431 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IXCP01N90E.pdf
Inchiesta

introduzione

We can supply IXCP01N90E, use the request quote form to request IXCP01N90E pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXCP01N90E.The price and lead time for IXCP01N90E depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXCP01N90E.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 25µA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-220AB
Serie:-
Rds On (max) a Id, Vgs:80 Ohm @ 50mA, 10V
Dissipazione di potenza (max):40W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-220-3
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:133pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:7.5nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):900V
Descrizione dettagliata:N-Channel 900V 250mA (Tc) 40W (Tc) Through Hole TO-220AB
Corrente - Drain continuo (Id) @ 25 ° C:250mA (Tc)
Email:[email protected]

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