IPG20N06S2L50ATMA1
IPG20N06S2L50ATMA1
Modello di prodotti:
IPG20N06S2L50ATMA1
fabbricante:
International Rectifier (Infineon Technologies)
Descrizione:
MOSFET 2N-CH 55V 20A TDSON-8-4
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
34307 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IPG20N06S2L50ATMA1.pdf

introduzione

We can supply IPG20N06S2L50ATMA1, use the request quote form to request IPG20N06S2L50ATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPG20N06S2L50ATMA1.The price and lead time for IPG20N06S2L50ATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPG20N06S2L50ATMA1.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2V @ 19µA
Contenitore dispositivo fornitore:PG-TDSON-8-4
Serie:OptiMOS™
Rds On (max) a Id, Vgs:50 mOhm @ 15A, 10V
Potenza - Max:51W
imballaggio:Tape & Reel (TR)
Contenitore / involucro:8-PowerVDFN
Altri nomi:IPG20N06S2L-50
IPG20N06S2L-50-ND
IPG20N06S2L50ATMA1TR
SP000613728
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:560pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:17nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):55V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 55V 20A 51W Surface Mount PG-TDSON-8-4
Corrente - Drain continuo (Id) @ 25 ° C:20A
Numero di parte base:*PG20N06
Email:[email protected]

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