IPG16N10S4L61AATMA1
IPG16N10S4L61AATMA1
Modello di prodotti:
IPG16N10S4L61AATMA1
fabbricante:
International Rectifier (Infineon Technologies)
Descrizione:
MOSFET 2N-CH 8TDSON
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
34975 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IPG16N10S4L61AATMA1.pdf

introduzione

We can supply IPG16N10S4L61AATMA1, use the request quote form to request IPG16N10S4L61AATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPG16N10S4L61AATMA1.The price and lead time for IPG16N10S4L61AATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPG16N10S4L61AATMA1.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.1V @ 90µA
Contenitore dispositivo fornitore:PG-TDSON-8-10
Serie:Automotive, AEC-Q101, OptiMOS™
Rds On (max) a Id, Vgs:61 mOhm @ 16A, 10V
Potenza - Max:29W
imballaggio:Tape & Reel (TR)
Contenitore / involucro:8-PowerVDFN
Altri nomi:SP001102932
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:845pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:11nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):100V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 100V 16A 29W Surface Mount PG-TDSON-8-10
Corrente - Drain continuo (Id) @ 25 ° C:16A
Email:[email protected]

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