HUFA76413DK8T
HUFA76413DK8T
Modello di prodotti:
HUFA76413DK8T
fabbricante:
AMI Semiconductor / ON Semiconductor
Descrizione:
MOSFET 2N-CH 60V 5.1A 8-SO
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
68022 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
HUFA76413DK8T.pdf

introduzione

We can supply HUFA76413DK8T, use the request quote form to request HUFA76413DK8T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUFA76413DK8T.The price and lead time for HUFA76413DK8T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUFA76413DK8T.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3V @ 250µA
Contenitore dispositivo fornitore:8-SO
Serie:UltraFET™
Rds On (max) a Id, Vgs:49 mOhm @ 5.1A, 10V
Potenza - Max:2.5W
imballaggio:Cut Tape (CT)
Contenitore / involucro:8-SOIC (0.154", 3.90mm Width)
Altri nomi:HUFA76413DK8TCT
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:620pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:23nC @ 10V
Tipo FET:2 N-Channel (Dual)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):60V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual) 60V 5.1A 2.5W Surface Mount 8-SO
Corrente - Drain continuo (Id) @ 25 ° C:5.1A
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti