CTLDM304P-M832DS TR
CTLDM304P-M832DS TR
Modello di prodotti:
CTLDM304P-M832DS TR
fabbricante:
Central Semiconductor
Descrizione:
MOSFET 2P-CH 30V 4.2A TLM832DS
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
49681 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
CTLDM304P-M832DS TR.pdf

introduzione

We can supply CTLDM304P-M832DS TR, use the request quote form to request CTLDM304P-M832DS TR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CTLDM304P-M832DS TR.The price and lead time for CTLDM304P-M832DS TR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CTLDM304P-M832DS TR.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:1.3V @ 250µA
Contenitore dispositivo fornitore:TLM832DS
Serie:-
Rds On (max) a Id, Vgs:70 mOhm @ 4.2A, 10V
Potenza - Max:1.65W
imballaggio:Cut Tape (CT)
Contenitore / involucro:8-TDFN Exposed Pad
Altri nomi:CTLDM304P-M832DS CT
CTLDM304P-M832DS CT-ND
CTLDM304P-M832DSCT
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:760pF @ 15V
Carica Gate (Qg) (Max) @ Vgs:6.4nC @ 4.5V
Tipo FET:2 P-Channel (Dual)
Caratteristica FET:Standard
Tensione drain-source (Vdss):30V
Descrizione dettagliata:Mosfet Array 2 P-Channel (Dual) 30V 4.2A 1.65W Surface Mount TLM832DS
Corrente - Drain continuo (Id) @ 25 ° C:4.2A
Email:[email protected]

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