Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-RF > BLP27M810Z
BLP27M810Z
BLP27M810Z
Modello di prodotti:
BLP27M810Z
fabbricante:
Ampleon
Descrizione:
RF FET LDMOS 65V 17DB 16VDFN
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
57974 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
BLP27M810Z.pdf
Inchiesta

introduzione

We can supply BLP27M810Z, use the request quote form to request BLP27M810Z pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BLP27M810Z.The price and lead time for BLP27M810Z depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BLP27M810Z.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Tensione - Prova:28V
Tensione - nominale:65V
Tipo transistor:LDMOS (Dual), Common Source
Contenitore dispositivo fornitore:16-HVSON (6x4)
Serie:-
Alimentazione - uscita:2W
imballaggio:Original-Reel®
Contenitore / involucro:16-VDFN Exposed Pad
Altri nomi:1603-1032-6
Figura di rumore:-
Moisture Sensitivity Level (MSL):3 (168 Hours)
Produttore tempi di consegna standard:13 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Guadagno:17dB
Frequenza:2.14GHz
Descrizione dettagliata:RF Mosfet LDMOS (Dual), Common Source 28V 110mA 2.14GHz 17dB 2W 16-HVSON (6x4)
Valutazione attuale:-
Corrente - Test:110mA
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per BLP27M810Z

Immagine Modello di prodotti Produttori Descrizione vista
BLP25M710Z Image BLP25M710Z Ampleon RF FET LDMOS 65V 16DB 12VDFN Inchiesta
BLP35M805Z Image BLP35M805Z Ampleon RF FET LDMOS 65V 18DB 16VDFN Inchiesta
BLP25M705Z Image BLP25M705Z Ampleon RF FET LDMOS 65V 16DB 12VDFN Inchiesta
BLP7G22-05Z Image BLP7G22-05Z Ampleon RF FET LDMOS 65V 16DB 12VDFN Inchiesta
BLP7G22-10Z Image BLP7G22-10Z Ampleon RF FET LDMOS 65V 16DB 12VDFN Inchiesta
BLP7G07S-140P,118 Image BLP7G07S-140P,118 NXP Semiconductors / Freescale TRANSISTOR RF POWER 140W HSOP4F Inchiesta
BLP10H630PY Ampleon RF MOSFET LDMOS 50V 4-HSOPF Inchiesta
BLP10H630PGY Image BLP10H630PGY Ampleon RF MOSFET LDMOS 50V 4-HSOP Inchiesta
BLP8G10S-270PWY Image BLP8G10S-270PWY Ampleon RF FET LDMOS 65V 20DB SOT12212 Inchiesta
BLP10H660PGY Image BLP10H660PGY Ampleon RF MOSFET LDMOS 50V 4-HSOP Inchiesta
BLP10H6120PY Ampleon RF MOSFET LDMOS 50V 4-HSOPF Inchiesta
BLP7G07S-140PY Image BLP7G07S-140PY Ampleon RF FET LDMOS 65V 20.9DB SOT12231 Inchiesta
BLP8G05S-200Y Image BLP8G05S-200Y Ampleon RF FET LDMOS 65V 21DB SOT11382 Inchiesta
BLP8G05S-200GY Image BLP8G05S-200GY Ampleon RF FET LDMOS 65V 21DB SOT12042 Inchiesta
BLP10H690PY Ampleon RF MOSFET LDMOS 50V 4-HSOPF Inchiesta
BLP8G10S-45PGJ Image BLP8G10S-45PGJ NXP Semiconductors / Freescale TRANS LDMOS 45W 4HSOP Inchiesta
BLP15M7160PY Image BLP15M7160PY Ampleon RF FET LDMOS 65V 20DB SOT12232 Inchiesta
BLP7G22-10,135 NXP Semiconductors / Freescale TRANSISTOR DRIVER LDMOS 12HVSON Inchiesta
BLP10H660PY Ampleon RF MOSFET LDMOS 50V 4-HSOPF Inchiesta
BLP10H690PGY Image BLP10H690PGY Ampleon RF MOSFET LDMOS 50V 4-HSOP Inchiesta

Latest Notizie