APTMC60TL11CT3AG
APTMC60TL11CT3AG
Modello di prodotti:
APTMC60TL11CT3AG
fabbricante:
Microsemi
Descrizione:
MOSFET 4N-CH 1200V 28A SP3
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
56924 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APTMC60TL11CT3AG.pdf

introduzione

We can supply APTMC60TL11CT3AG, use the request quote form to request APTMC60TL11CT3AG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTMC60TL11CT3AG.The price and lead time for APTMC60TL11CT3AG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTMC60TL11CT3AG.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.2V @ 1mA
Contenitore dispositivo fornitore:SP3
Serie:-
Rds On (max) a Id, Vgs:98 mOhm @ 20A, 20V
Potenza - Max:125W
imballaggio:Bulk
Contenitore / involucro:SP3
temperatura di esercizio:-40°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:32 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:950pF @ 1000V
Carica Gate (Qg) (Max) @ Vgs:49nC @ 20V
Tipo FET:4 N-Channel (Three Level Inverter)
Caratteristica FET:Silicon Carbide (SiC)
Tensione drain-source (Vdss):1200V (1.2kV)
Descrizione dettagliata:Mosfet Array 4 N-Channel (Three Level Inverter) 1200V (1.2kV) 28A (Tc) 125W Chassis Mount SP3
Corrente - Drain continuo (Id) @ 25 ° C:28A (Tc)
Email:[email protected]

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