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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-matrici > APTM100A13DG
APTM100A13DG
Modello di prodotti:
APTM100A13DG
fabbricante:
Microsemi
Descrizione:
MOSFET 2N-CH 1000V 65A SP6
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
14259 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APTM100A13DG.pdf
Inchiesta

introduzione

We can supply APTM100A13DG, use the request quote form to request APTM100A13DG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM100A13DG.The price and lead time for APTM100A13DG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM100A13DG.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 6mA
Contenitore dispositivo fornitore:SP6
Serie:-
Rds On (max) a Id, Vgs:156 mOhm @ 32.5A, 10V
Potenza - Max:1250W
imballaggio:Bulk
Contenitore / involucro:SP6
temperatura di esercizio:-40°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:32 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:15200pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:562nC @ 10V
Tipo FET:2 N-Channel (Half Bridge)
Caratteristica FET:Standard
Tensione drain-source (Vdss):1000V (1kV)
Descrizione dettagliata:Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6
Corrente - Drain continuo (Id) @ 25 ° C:65A
Email:[email protected]

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