Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-matrici > APTC90HM60T3G
APTC90HM60T3G
Modello di prodotti:
APTC90HM60T3G
fabbricante:
Microsemi
Descrizione:
MOSFET 4N-CH 900V 59A SP3
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
58772 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APTC90HM60T3G.pdf
Inchiesta

introduzione

We can supply APTC90HM60T3G, use the request quote form to request APTC90HM60T3G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTC90HM60T3G.The price and lead time for APTC90HM60T3G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTC90HM60T3G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3.5V @ 6mA
Contenitore dispositivo fornitore:SP3
Serie:CoolMOS™
Rds On (max) a Id, Vgs:60 mOhm @ 52A, 10V
Potenza - Max:462W
imballaggio:Tray
Contenitore / involucro:SP3
temperatura di esercizio:-40°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:13600pF @ 100V
Carica Gate (Qg) (Max) @ Vgs:540nC @ 10V
Tipo FET:4 N-Channel (H-Bridge)
Caratteristica FET:Super Junction
Tensione drain-source (Vdss):900V
Descrizione dettagliata:Mosfet Array 4 N-Channel (H-Bridge) 900V 59A 462W Chassis Mount SP3
Corrente - Drain continuo (Id) @ 25 ° C:59A
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per APTC90HM60T3G

Immagine Modello di prodotti Produttori Descrizione vista
APTC90SKM60T1G Microsemi MOSFET N-CH 900V 59A SP1 Inchiesta
APTC90DAM60T1G Image APTC90DAM60T1G Microsemi MOSFET N-CH 900V 59A SP1 Inchiesta
APTCV60HM70BT3G Microsemi POWER MOD IGBT3 FULL BRIDGE SP3 Inchiesta
APTC90AM602G Microsemi MOSFET 2N-CH 900V 59A SP2 Inchiesta
APTC90H12T2G Microsemi MOSFET 4N-CH 900V 30A SP2 Inchiesta
APTCV60HM45RCT3G Image APTCV60HM45RCT3G Microsemi POWER MOD IGBT3 FULL BRIDGE SP3 Inchiesta
APTCV60HM45RT3G Image APTCV60HM45RT3G Microsemi POWER MOD IGBT3 FULL BRIDGE SP3 Inchiesta
APTC90AM60SCTG Microsemi MOSFET 2N-CH 900V 59A SP4 Inchiesta
APTC90TAM60TPG Microsemi MOSFET 6N-CH 900V 59A SP6-P Inchiesta
APTC90DSK12T1G Microsemi MOSFET 2N-CH 900V 30A SP1 Inchiesta
APTC90H12SCTG Microsemi MOSFET 4N-CH 900V 30A SP4 Inchiesta
APTCV60HM45BT3G Image APTCV60HM45BT3G Microsemi POWER MOD IGBT3 FULL BRIDGE SP3 Inchiesta
APTC90SKM60CT1G Microsemi MOSFET N-CH 900V 59A SP1 Inchiesta
APTC90DDA12T1G Microsemi MOSFET 2N-CH 900V 30A SP1 Inchiesta
APTC90H12T1G Microsemi MOSFET 4N-CH 900V 30A SP1 Inchiesta
APTC90AM60T1G Microsemi MOSFET 2N-CH 900V 59A SP1 Inchiesta
APTCV60HM45BC20T3G Image APTCV60HM45BC20T3G Microsemi POWER MOD IGBT3 FULL BRIDGE SP3 Inchiesta
APTCV40H60CT1G Microsemi IGBT TRENCH FULL BRIDGE SP1 Inchiesta
APTCV50H60T3G Microsemi IGBT TRENCH FULL BRIDGE SP3 Inchiesta
APTC90DAM60CT1G Microsemi MOSFET N-CH 900V 59A SP1 Inchiesta

Latest Notizie