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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APTC60SKM35T1G
APTC60SKM35T1G
Modello di prodotti:
APTC60SKM35T1G
fabbricante:
Microsemi
Descrizione:
MOSFET N-CH 600V 72A SP1
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
52007 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
1.APTC60SKM35T1G.pdf2.APTC60SKM35T1G.pdf
Inchiesta

introduzione

We can supply APTC60SKM35T1G, use the request quote form to request APTC60SKM35T1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTC60SKM35T1G.The price and lead time for APTC60SKM35T1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTC60SKM35T1G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3.9V @ 5.4mA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:SP1
Serie:-
Rds On (max) a Id, Vgs:35 mOhm @ 72A, 10V
Dissipazione di potenza (max):416W (Tc)
imballaggio:Bulk
Contenitore / involucro:SP1
temperatura di esercizio:-40°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:14000pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:518nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):600V
Descrizione dettagliata:N-Channel 600V 72A (Tc) 416W (Tc) Chassis Mount SP1
Corrente - Drain continuo (Id) @ 25 ° C:72A (Tc)
Email:[email protected]

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