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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APT56F60B2
APT56F60B2
APT56F60B2
Modello di prodotti:
APT56F60B2
fabbricante:
Microsemi
Descrizione:
MOSFET N-CH 600V 60A TO-247
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
33069 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT56F60B2.pdf
Inchiesta

introduzione

We can supply APT56F60B2, use the request quote form to request APT56F60B2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT56F60B2.The price and lead time for APT56F60B2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT56F60B2.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 2.5mA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:T-MAX™ [B2]
Serie:POWER MOS 8™
Rds On (max) a Id, Vgs:110 mOhm @ 28A, 10V
Dissipazione di potenza (max):1040W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-247-3 Variant
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:11300pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:280nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):600V
Descrizione dettagliata:N-Channel 600V 60A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
Corrente - Drain continuo (Id) @ 25 ° C:60A (Tc)
Email:[email protected]

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