Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistori-IGBTs-singolo > APT40GR120B2SCD10
APT40GR120B2SCD10
APT40GR120B2SCD10
Modello di prodotti:
APT40GR120B2SCD10
fabbricante:
Microsemi
Descrizione:
IGBT 1200V 88A 500W TO247
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
29543 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT40GR120B2SCD10.pdf
Inchiesta

introduzione

We can supply APT40GR120B2SCD10, use the request quote form to request APT40GR120B2SCD10 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT40GR120B2SCD10.The price and lead time for APT40GR120B2SCD10 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT40GR120B2SCD10.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Tensione - rottura collettore-emettitore (max):1200V
Vce (on) (max) a VGE, Ic:3.2V @ 15V, 40A
Condizione di test:600V, 40A, 4.3 Ohm, 15V
Td (on / off) @ 25 ° C:20ns/166ns
di scambio energetico:929µJ (on), 1070µJ (off)
Contenitore dispositivo fornitore:TO-247
Serie:-
Potenza - Max:500W
imballaggio:Tube
Contenitore / involucro:TO-247-3
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Tipo di ingresso:Standard
Tipo IGBT:NPT
carica gate:210nC
Descrizione dettagliata:IGBT NPT 1200V 88A 500W Through Hole TO-247
Corrente - collettore Pulsed (Icm):160A
Corrente - collettore (Ic) (max):88A
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per APT40GR120B2SCD10

Immagine Modello di prodotti Produttori Descrizione vista
APT40GR120B Image APT40GR120B Microsemi IGBT 1200V 88A 500W TO247 Inchiesta
APT40GP60SG Image APT40GP60SG Microsemi IGBT 600V 100A 543W D3PAK Inchiesta
APT40GR120S Image APT40GR120S Microsemi IGBT 1200V 88A 500W D3PAK Inchiesta
APT40M42JN Microsemi MOSFET N-CH 400V 86A ISOTOP Inchiesta
APT40M75JN Microsemi MOSFET N-CH 400V 56A ISOTOP Inchiesta
APT40GR120B2D30 Image APT40GR120B2D30 Microsemi IGBT 1200V 88A 500W TO247 Inchiesta
APT40GP60JDQ2 Image APT40GP60JDQ2 Microsemi IGBT 600V 86A 284W SOT227 Inchiesta
APT40SM120B Image APT40SM120B Microsemi MOSFET N-CH 1200V 41A TO247 Inchiesta
APT40M35JVFR Image APT40M35JVFR Microsemi MOSFET N-CH 400V 93A SOT-227 Inchiesta
APT40N60JCU3 Image APT40N60JCU3 Microsemi MOSFET N-CH 600V 40A SOT-227 Inchiesta
APT40GT60BRG Image APT40GT60BRG Microsemi IGBT 600V 80A 345W TO247 Inchiesta
APT40GP90B2DQ2G Image APT40GP90B2DQ2G Microsemi IGBT 900V 101A 543W TMAX Inchiesta
APT40GP90JDQ2 Image APT40GP90JDQ2 Microsemi IGBT 900V 64A 284W SOT227 Inchiesta
APT40GP90J Image APT40GP90J Microsemi IGBT 900V 68A 284W SOT227 Inchiesta
APT40M70JVFR Image APT40M70JVFR Microsemi MOSFET N-CH 400V 53A SOT-227 Inchiesta
APT40GP60BG Image APT40GP60BG Microsemi IGBT 600V 100A 543W TO247 Inchiesta
APT40GP60B2DQ2G Image APT40GP60B2DQ2G Microsemi IGBT 600V 100A 543W TMAX Inchiesta
APT40N60JCU2 Image APT40N60JCU2 Microsemi MOSFET N-CH 600V 40A SOT-227 Inchiesta
APT40GP90BG Image APT40GP90BG Microsemi IGBT 900V 100A 543W TO247 Inchiesta
APT40M70LVFRG Image APT40M70LVFRG Microsemi MOSFET N-CH 400V 57A TO-264 Inchiesta

Latest Notizie