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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APT12067B2LLG
APT12067B2LLG
APT12067B2LLG
Modello di prodotti:
APT12067B2LLG
fabbricante:
Microsemi
Descrizione:
MOSFET N-CH 1200V 18A T-MAX
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
20924 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT12067B2LLG.pdf
Inchiesta

introduzione

We can supply APT12067B2LLG, use the request quote form to request APT12067B2LLG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT12067B2LLG.The price and lead time for APT12067B2LLG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT12067B2LLG.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 2.5mA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:T-MAX™ [B2]
Serie:POWER MOS 7®
Rds On (max) a Id, Vgs:670 mOhm @ 9A, 10V
Dissipazione di potenza (max):565W (Tc)
imballaggio:Bulk
Contenitore / involucro:TO-247-3 Variant
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:4420pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:150nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):1200V
Descrizione dettagliata:N-Channel 1200V 18A (Tc) 565W (Tc) Through Hole T-MAX™ [B2]
Corrente - Drain continuo (Id) @ 25 ° C:18A (Tc)
Email:[email protected]

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