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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-matrici > AON7900
AON7900
AON7900
Modello di prodotti:
AON7900
fabbricante:
Alpha and Omega Semiconductor, Inc.
Descrizione:
MOSFET 2N-CH 30V 8A/13A 8DFN
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
14600 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
AON7900.pdf
Inchiesta

introduzione

We can supply AON7900, use the request quote form to request AON7900 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AON7900.The price and lead time for AON7900 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AON7900.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.3V @ 250µA
Contenitore dispositivo fornitore:8-DFN-EP (3.3x3.3)
Serie:-
Rds On (max) a Id, Vgs:21 mOhm @ 8A, 10V
Potenza - Max:1.8W
imballaggio:Tape & Reel (TR)
Contenitore / involucro:8-PowerWDFN
Altri nomi:785-1249-2
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:710pF @ 15V
Carica Gate (Qg) (Max) @ Vgs:11nC @ 10V
Tipo FET:2 N-Channel (Half Bridge)
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):30V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Half Bridge) 30V 8A, 13A 1.8W Surface Mount 8-DFN-EP (3.3x3.3)
Corrente - Drain continuo (Id) @ 25 ° C:8A, 13A
Email:[email protected]

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