Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 4V @ 50mA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | Y3-Li |
Seri: | HiPerFET™ |
Rds Pada (Max) @ Id, Vgs: | 3.8 mOhm @ 430A, 10V |
Power Disipasi (Max): | - |
Pengemasan: | Bulk |
Paket / Case: | Y3-Li |
Nama lain: | Q1221985A VMO58002F |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Chassis Mount |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 2750nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 200V |
Detil Deskripsi: | N-Channel 200V 580A (Tc) Chassis Mount Y3-Li |
Current - Continuous Drain (Id) @ 25 ° C: | 580A (Tc) |
Nomor Bagian Dasar: | VMO |
Email: | [email protected] |