SQJQ402E-T1_GE3
SQJQ402E-T1_GE3
Nomor bagian:
SQJQ402E-T1_GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 40V 200A POWERPAK8
Kuantitas yang Tersedia:
54788 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SQJQ402E-T1_GE3.pdf

pengantar

We can supply SQJQ402E-T1_GE3, use the request quote form to request SQJQ402E-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJQ402E-T1_GE3.The price and lead time for SQJQ402E-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJQ402E-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® 8 x 8
Seri:Automotive, AEC-Q101, TrenchFET®
Rds Pada (Max) @ Id, Vgs:1.7 mOhm @ 20A, 10V
Power Disipasi (Max):150W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® 8 x 8 Single
Nama lain:SQJQ402E-T1_GE3-ND
SQJQ402E-T1_GE3TR
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Kapasitansi Masukan (Ciss) (Max) @ VDS:13500pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):40V
Detil Deskripsi:N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
Current - Continuous Drain (Id) @ 25 ° C:200A (Tc)
Email:[email protected]

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