SIRC10DP-T1-GE3
SIRC10DP-T1-GE3
Nomor bagian:
SIRC10DP-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 30V 60A POWERPAKSO-8
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
78341 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIRC10DP-T1-GE3.pdf

pengantar

We can supply SIRC10DP-T1-GE3, use the request quote form to request SIRC10DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIRC10DP-T1-GE3.The price and lead time for SIRC10DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIRC10DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):+20V, -16V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® SO-8
Seri:TrenchFET® Gen IV
Rds Pada (Max) @ Id, Vgs:3.5 mOhm @ 10A, 10V
Power Disipasi (Max):43W (Tc)
Pengemasan:Cut Tape (CT)
Paket / Case:PowerPAK® SO-8
Nama lain:SIRC10DP-T1-GE3CT
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1873pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
FET Jenis:N-Channel
Fitur FET:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 60A (Tc) 43W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25 ° C:60A (Tc)
Email:[email protected]

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