SIHB12N50C-E3
SIHB12N50C-E3
Nomor bagian:
SIHB12N50C-E3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 500V 12A D2PAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
41913 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIHB12N50C-E3.pdf

pengantar

We can supply SIHB12N50C-E3, use the request quote form to request SIHB12N50C-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB12N50C-E3.The price and lead time for SIHB12N50C-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB12N50C-E3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D²PAK (TO-263)
Seri:-
Rds Pada (Max) @ Id, Vgs:555 mOhm @ 4A, 10V
Power Disipasi (Max):208W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1375pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):500V
Detil Deskripsi:N-Channel 500V 12A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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