SI5915DC-T1-GE3
SI5915DC-T1-GE3
Nomor bagian:
SI5915DC-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET 2P-CH 8V 3.4A 1206-8
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
38206 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI5915DC-T1-GE3.pdf

pengantar

We can supply SI5915DC-T1-GE3, use the request quote form to request SI5915DC-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5915DC-T1-GE3.The price and lead time for SI5915DC-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5915DC-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:450mV @ 250µA (Min)
Paket Perangkat pemasok:1206-8 ChipFET™
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:70 mOhm @ 3.4A, 4.5V
Listrik - Max:1.1W
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SMD, Flat Lead
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:-
Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
FET Jenis:2 P-Channel (Dual)
Fitur FET:Logic Level Gate
Tiriskan untuk Sumber Tegangan (Vdss):8V
Detil Deskripsi:Mosfet Array 2 P-Channel (Dual) 8V 3.4A 1.1W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25 ° C:3.4A
Nomor Bagian Dasar:SI5915
Email:[email protected]

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