SI4564DY-T1-GE3
Nomor bagian:
SI4564DY-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N/P-CH 40V 10A 8SOIC
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
29840 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI4564DY-T1-GE3.pdf

pengantar

We can supply SI4564DY-T1-GE3, use the request quote form to request SI4564DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4564DY-T1-GE3.The price and lead time for SI4564DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4564DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Paket Perangkat pemasok:8-SO
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:17.5 mOhm @ 8A, 10V
Listrik - Max:3.1W, 3.2W
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Nama lain:SI4564DY-T1-GE3TR
SI4564DYT1GE3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:855pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V
FET Jenis:N and P-Channel
Fitur FET:Logic Level Gate
Tiriskan untuk Sumber Tegangan (Vdss):40V
Detil Deskripsi:Mosfet Array N and P-Channel 40V 10A, 9.2A 3.1W, 3.2W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:10A, 9.2A
Nomor Bagian Dasar:SI4564
Email:[email protected]

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