SI4160DY-T1-GE3
Nomor bagian:
SI4160DY-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 30V 25.4A 8-SOIC
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
25749 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI4160DY-T1-GE3.pdf

pengantar

We can supply SI4160DY-T1-GE3, use the request quote form to request SI4160DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4160DY-T1-GE3.The price and lead time for SI4160DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4160DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:8-SO
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:4.9 mOhm @ 15A, 10V
Power Disipasi (Max):2.5W (Ta), 5.7W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Nama lain:SI4160DY-T1-GE3-ND
SI4160DY-T1-GE3TR
SI4160DYT1GE3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:2071pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:25.4A (Tc)
Email:[email protected]

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