SI1489EDH-T1-GE3
Nomor bagian:
SI1489EDH-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET P-CH 8V 2A SOT-363
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
26075 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI1489EDH-T1-GE3.pdf

pengantar

We can supply SI1489EDH-T1-GE3, use the request quote form to request SI1489EDH-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1489EDH-T1-GE3.The price and lead time for SI1489EDH-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1489EDH-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:700mV @ 250µA
Vgs (Max):±5V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:SOT-363
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:48 mOhm @ 3A, 4.5V
Power Disipasi (Max):2.8W (Tc)
Pengemasan:Cut Tape (CT)
Paket / Case:6-TSSOP, SC-88, SOT-363
Nama lain:SI1489EDH-T1-GE3CT
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
FET Jenis:P-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):1.2V, 4.5V
Tiriskan untuk Sumber Tegangan (Vdss):8V
Detil Deskripsi:P-Channel 8V 2A (Tc) 2.8W (Tc) Surface Mount SOT-363
Current - Continuous Drain (Id) @ 25 ° C:2A (Tc)
Email:[email protected]

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