RS1E200BNTB
RS1E200BNTB
Nomor bagian:
RS1E200BNTB
Pabrikan:
LAPIS Semiconductor
Deskripsi:
MOSFET N-CH 30V 20A 8HSOP
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
61837 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
1.RS1E200BNTB.pdf2.RS1E200BNTB.pdf

pengantar

We can supply RS1E200BNTB, use the request quote form to request RS1E200BNTB pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RS1E200BNTB.The price and lead time for RS1E200BNTB depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RS1E200BNTB.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:8-HSOP
Seri:-
Rds Pada (Max) @ Id, Vgs:3.9 mOhm @ 20A, 10V
Power Disipasi (Max):3W (Ta), 25W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:8-PowerTDFN
Nama lain:RS1E200BNTBTR
Suhu Operasional:150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:3100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:59nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
Current - Continuous Drain (Id) @ 25 ° C:20A (Ta)
Email:[email protected]

Cepat Permintaan Penawaran

Nomor bagian
Kuantitas
Perusahaan
E-mail
Telepon
Komentar