NTMD6601NR2G
Nomor bagian:
NTMD6601NR2G
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET 2N-CH 80V 1.1A 8SOIC
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
70903 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
NTMD6601NR2G.pdf

pengantar

We can supply NTMD6601NR2G, use the request quote form to request NTMD6601NR2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTMD6601NR2G.The price and lead time for NTMD6601NR2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTMD6601NR2G.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Paket Perangkat pemasok:8-SOIC
Seri:-
Rds Pada (Max) @ Id, Vgs:215 mOhm @ 2.2A, 10V
Listrik - Max:600mW
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Jenis:2 N-Channel (Dual)
Fitur FET:Logic Level Gate
Tiriskan untuk Sumber Tegangan (Vdss):80V
Detil Deskripsi:Mosfet Array 2 N-Channel (Dual) 80V 1.1A 600mW Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25 ° C:1.1A
Email:[email protected]

Cepat Permintaan Penawaran

Nomor bagian
Kuantitas
Perusahaan
E-mail
Telepon
Komentar