NTD4960N-1G
NTD4960N-1G
Nomor bagian:
NTD4960N-1G
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 30V 11.1A IPAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
26759 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
NTD4960N-1G.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:I-PAK
Seri:-
Rds Pada (Max) @ Id, Vgs:8 mOhm @ 30A, 10V
Power Disipasi (Max):1.07W (Ta), 35.71W (Tc)
Pengemasan:Tube
Paket / Case:TO-251-3 Short Leads, IPak, TO-251AA
Nama lain:NTD4960N-1GOS
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:8.9A (Ta), 55A (Tc)
Email:[email protected]

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