IXFP8N65X2
IXFP8N65X2
Nomor bagian:
IXFP8N65X2
Pabrikan:
IXYS Corporation
Deskripsi:
MOSFET N-CH
Kuantitas yang Tersedia:
56414 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
IXFP8N65X2.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220
Seri:HiPerFET™
Rds Pada (Max) @ Id, Vgs:450 mOhm @ 4A, 10V
Power Disipasi (Max):150W (Tc)
Paket / Case:TO-220-3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Manufacturer Standard Lead Time:24 Weeks
Kapasitansi Masukan (Ciss) (Max) @ VDS:790pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 8A (Tc) 150W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25 ° C:8A (Tc)
Email:[email protected]

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