IRFB9N65A
IRFB9N65A
Nomor bagian:
IRFB9N65A
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 650V 8.5A TO-220AB
Memimpin Status Bebas / Status RoHS:
Berisi timbal / RoHS tidak patuh
Kuantitas yang Tersedia:
71102 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
1.IRFB9N65A.pdf2.IRFB9N65A.pdf

pengantar

We can supply IRFB9N65A, use the request quote form to request IRFB9N65A pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRFB9N65A.The price and lead time for IRFB9N65A depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRFB9N65A.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220AB
Seri:-
Rds Pada (Max) @ Id, Vgs:930 mOhm @ 5.1A, 10V
Power Disipasi (Max):167W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3
Nama lain:*IRFB9N65A
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Contains lead / RoHS non-compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1417pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25 ° C:8.5A (Tc)
Email:[email protected]

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