Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 2.1V @ 100µA |
Vgs (Max): | ±16V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | DIRECTFET™ MX |
Seri: | HEXFET® |
Rds Pada (Max) @ Id, Vgs: | 1.6 mOhm @ 29A, 10V |
Power Disipasi (Max): | 2.1W (Ta), 69W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | DirectFET™ Isometric MX |
Nama lain: | IRF6893MTR1PBF-ND IRF6893MTR1PBFTR |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 3480pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 25V |
Detil Deskripsi: | N-Channel 25V 29A (Ta), 168A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount DIRECTFET™ MX |
Current - Continuous Drain (Id) @ 25 ° C: | 29A (Ta), 168A (Tc) |
Email: | [email protected] |