Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | 1460pF @ 15V |
Tegangan - Breakdown: | DIRECTFET™ SQ |
Vgs (th) (Max) @ Id: | 9.1 mOhm @ 12A, 10V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | HEXFET® |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 12A (Ta), 55A (Tc) |
Polarisasi: | DirectFET™ Isometric SQ |
Nama lain: | IRF6621 IRF6621-ND SP001524780 |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 3 (168 Hours) |
Nomor Bagian Produsen: | IRF6621TR1 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 17.5nC @ 4.5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.25V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 30V 12A (Ta), 55A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET N-CH 30V 12A DIRECTFET |
Current - Continuous Drain (Id) @ 25 ° C: | 30V |
kapasitansi Ratio: | 2.2W (Ta), 42W (Tc) |
Email: | [email protected] |