Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 4.5V @ 200µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | PG-TO220 Full Pack |
Seri: | CoolMOS™ |
Rds Pada (Max) @ Id, Vgs: | 660 mOhm @ 2.1A, 10V |
Power Disipasi (Max): | 27.8W (Tc) |
Pengemasan: | Tube |
Paket / Case: | TO-220-3 Full Pack |
Nama lain: | IPA65R660CFD IPA65R660CFD-ND SP000838284 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 615pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
Detil Deskripsi: | N-Channel 650V 6A (Tc) 27.8W (Tc) Through Hole PG-TO220 Full Pack |
Current - Continuous Drain (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |