FQU10N20TU_AM002
FQU10N20TU_AM002
Nomor bagian:
FQU10N20TU_AM002
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 200V 7.6A IPAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
50251 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
FQU10N20TU_AM002.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:I-PAK
Seri:QFET®
Rds Pada (Max) @ Id, Vgs:360 mOhm @ 3.8A, 10V
Power Disipasi (Max):2.5W (Ta), 51W (Tc)
Pengemasan:Tube
Paket / Case:TO-251-3 Short Leads, IPak, TO-251AA
Suhu Operasional:-
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:670pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):200V
Detil Deskripsi:N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:7.6A (Tc)
Email:[email protected]

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