Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | 2050pF @ 25V |
Tegangan - Breakdown: | TO-220F-3 (Y-Forming) |
Vgs (th) (Max) @ Id: | 1.55 Ohm @ 4A, 10V |
Vgs (Max): | 10V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | QFET® |
Status RoHS: | Tube |
Rds Pada (Max) @ Id, Vgs: | 8A (Tc) |
Polarisasi: | TO-220-3 Full Pack, Formed Leads |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Through Hole |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 23 Weeks |
Nomor Bagian Produsen: | FQPF8N80CYDTU |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 45nC @ 10V |
IGBT Jenis: | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming) |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET N-CH 800V 8A TO-220F |
Current - Continuous Drain (Id) @ 25 ° C: | 800V |
kapasitansi Ratio: | 59W (Tc) |
Email: | [email protected] |