FDT86102LZ
Nomor bagian:
FDT86102LZ
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 100V 6.6A SOT-223
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
79154 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
1.FDT86102LZ.pdf2.FDT86102LZ.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:SOT-223-4
Seri:PowerTrench®
Rds Pada (Max) @ Id, Vgs:28 mOhm @ 6.6A, 10V
Power Disipasi (Max):2.2W (Ta)
Pengemasan:Cut Tape (CT)
Paket / Case:TO-261-4, TO-261AA
Nama lain:FDT86102LZFSCT
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:25 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1490pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):100V
Detil Deskripsi:N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
Current - Continuous Drain (Id) @ 25 ° C:6.6A (Ta)
Email:[email protected]

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