FCPF190N60E
FCPF190N60E
Nomor bagian:
FCPF190N60E
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 600V TO-220-3
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
16510 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
FCPF190N60E.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220F-3
Seri:SuperFET® II
Rds Pada (Max) @ Id, Vgs:190 mOhm @ 10A, 10V
Power Disipasi (Max):39W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3 Full Pack
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:52 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:3175pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:82nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):600V
Detil Deskripsi:N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3
Current - Continuous Drain (Id) @ 25 ° C:20.6A (Tc)
Email:[email protected]

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