SIHB22N65E-GE3
SIHB22N65E-GE3
Dio brojeva:
SIHB22N65E-GE3
Proizvođač:
Vishay / Siliconix
Opis:
MOSFET N-CH 650V 22A D2PAK
Status slobodnog olova / RoHS-a:
Bez olova / RoHS sukladni
Dostupan Količina:
47926 Pieces
Vrijeme isporuke:
1-2 days
Obrazac podataka:
SIHB22N65E-GE3.pdf

Uvod

We can supply SIHB22N65E-GE3, use the request quote form to request SIHB22N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB22N65E-GE3.The price and lead time for SIHB22N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB22N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Tehnički podaci

Stanje New & Unused, Original Packing
Podrijetlo Contact us
Napon - ispitivanje:2415pF @ 100V
Napon - kvar:D2PAK
Vgs (th) (maks.) @ Id:180 mOhm @ 11A, 10V
Vgs (Max):10V
Tehnologija:MOSFET (Metal Oxide)
Niz:-
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:22A (Tc)
Polarizacija:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Druga imena:SIHB22N65E-GE3TR
Radna temperatura:-55°C ~ 150°C (TJ)
Vrsta montaže:Surface Mount
Razina osjetljivosti vlage (MSL):1 (Unlimited)
Proizvođač Standardno vrijeme dovršetka:19 Weeks
Broj proizvođača:SIHB22N65E-GE3
Ulazni kapacitet (Ciss) (maks.) @ Vds:110nC @ 10V
Vrsta IGBT-a:±30V
Punjenje vrata (Qg) (maks.) @ Vgs:4V @ 250µA
FET značajka:N-Channel
Prošireni opis:N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK
Ispustite izvor napona (Vdss):-
Opis:MOSFET N-CH 650V 22A D2PAK
Tekuća - Kontinuirano pražnjenje (Id) @ 25 ° C:650V
Omjer kapaciteta:227W (Tc)
Email:[email protected]

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