SIHB12N65E-GE3
SIHB12N65E-GE3
Dio brojeva:
SIHB12N65E-GE3
Proizvođač:
Vishay / Siliconix
Opis:
MOSFET N-CH 650V 12A D2PAK
Status slobodnog olova / RoHS-a:
Bez olova / RoHS sukladni
Dostupan Količina:
33605 Pieces
Vrijeme isporuke:
1-2 days
Obrazac podataka:
SIHB12N65E-GE3.pdf

Uvod

We can supply SIHB12N65E-GE3, use the request quote form to request SIHB12N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB12N65E-GE3.The price and lead time for SIHB12N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB12N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Tehnički podaci

Stanje New & Unused, Original Packing
Podrijetlo Contact us
Napon - ispitivanje:1224pF @ 100V
Napon - kvar:D²PAK (TO-263)
Vgs (th) (maks.) @ Id:380 mOhm @ 6A, 10V
Tehnologija:MOSFET (Metal Oxide)
Niz:-
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:12A (Tc)
Polarizacija:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Radna temperatura:-55°C ~ 150°C (TJ)
Vrsta montaže:Surface Mount
Razina osjetljivosti vlage (MSL):1 (Unlimited)
Proizvođač Standardno vrijeme dovršetka:19 Weeks
Broj proizvođača:SIHB12N65E-GE3
Ulazni kapacitet (Ciss) (maks.) @ Vds:70nC @ 10V
Punjenje vrata (Qg) (maks.) @ Vgs:4V @ 250µA
FET značajka:N-Channel
Prošireni opis:N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)
Ispustite izvor napona (Vdss):-
Opis:MOSFET N-CH 650V 12A D2PAK
Tekuća - Kontinuirano pražnjenje (Id) @ 25 ° C:650V
Omjer kapaciteta:156W (Tc)
Email:[email protected]

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