SI3900DV-T1-E3
SI3900DV-T1-E3
Dio brojeva:
SI3900DV-T1-E3
Proizvođač:
Vishay / Siliconix
Opis:
MOSFET 2N-CH 20V 2A 6-TSOP
Status slobodnog olova / RoHS-a:
Bez olova / RoHS sukladni
Dostupan Količina:
70667 Pieces
Vrijeme isporuke:
1-2 days
Obrazac podataka:
SI3900DV-T1-E3.pdf

Uvod

We can supply SI3900DV-T1-E3, use the request quote form to request SI3900DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3900DV-T1-E3.The price and lead time for SI3900DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3900DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Tehnički podaci

Stanje New & Unused, Original Packing
Podrijetlo Contact us
Napon - ispitivanje:-
Napon - kvar:6-TSOP
Vgs (th) (maks.) @ Id:125 mOhm @ 2.4A, 4.5V
Niz:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:2A
Snaga - maks:830mW
Polarizacija:SOT-23-6 Thin, TSOT-23-6
Druga imena:SI3900DV-T1-E3TR
SI3900DVT1E3
Radna temperatura:-55°C ~ 150°C (TJ)
Vrsta montaže:Surface Mount
Razina osjetljivosti vlage (MSL):1 (Unlimited)
Proizvođač Standardno vrijeme dovršetka:15 Weeks
Broj proizvođača:SI3900DV-T1-E3
Ulazni kapacitet (Ciss) (maks.) @ Vds:4nC @ 4.5V
Punjenje vrata (Qg) (maks.) @ Vgs:1.5V @ 250µA
FET značajka:2 N-Channel (Dual)
Prošireni opis:Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Ispustite izvor napona (Vdss):Logic Level Gate
Opis:MOSFET 2N-CH 20V 2A 6-TSOP
Tekuća - Kontinuirano pražnjenje (Id) @ 25 ° C:20V
Email:[email protected]

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