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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXFN32N80P
IXFN32N80P
IXFN32N80P
Modèle de produit:
IXFN32N80P
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 800V 29A SOT-227B
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
71037 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXFN32N80P.pdf
Enquête

introduction

We can supply IXFN32N80P, use the request quote form to request IXFN32N80P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN32N80P.The price and lead time for IXFN32N80P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN32N80P.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:8820pF @ 25V
Tension - Ventilation:SOT-227B
Vgs (th) (Max) @ Id:270 mOhm @ 16A, 10V
La technologie:MOSFET (Metal Oxide)
Séries:PolarHV™
État RoHS:Tube
Rds On (Max) @ Id, Vgs:29A
Polarisation:SOT-227-4, miniBLOC
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Chassis Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:8 Weeks
Référence fabricant:IXFN32N80P
Capacité d'entrée (Ciss) (Max) @ Vds:150nC @ 10V
Charge de la porte (Qg) (Max) @ Vgs:5V @ 8mA
Fonction FET:N-Channel
Description élargie:N-Channel 800V 29A 625W (Tc) Chassis Mount SOT-227B
Tension drain-source (Vdss):-
La description:MOSFET N-CH 800V 29A SOT-227B
Courant - Drainage continu (Id) à 25 ° C:800V
Ratio de capacité:625W (Tc)
Email:[email protected]

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