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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > 2SK3564(STA4,Q,M)
2SK3564(STA4,Q,M)
2SK3564(STA4,Q,M)
Modèle de produit:
2SK3564(STA4,Q,M)
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 900V 3A TO-220SIS
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
16488 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.2SK3564(STA4,Q,M).pdf2.2SK3564(STA4,Q,M).pdf
Enquête

introduction

We can supply 2SK3564(STA4,Q,M), use the request quote form to request 2SK3564(STA4,Q,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SK3564(STA4,Q,M).The price and lead time for 2SK3564(STA4,Q,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SK3564(STA4,Q,M).We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:700pF @ 25V
Tension - Ventilation:TO-220SIS
Vgs (th) (Max) @ Id:4.3 Ohm @ 1.5A, 10V
Vgs (Max):10V
La technologie:MOSFET (Metal Oxide)
Séries:π-MOSIV
État RoHS:Tube
Rds On (Max) @ Id, Vgs:3A (Ta)
Polarisation:TO-220-3 Full Pack
Autres noms:2SK3564(Q)
2SK3564(STA4,Q)
2SK3564(STA4Q)
2SK3564(STA4Q)-ND
2SK3564(STA4QM)
2SK3564Q
2SK3564Q-ND
2SK3564STA4QM
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:2SK3564(STA4,Q,M)
Capacité d'entrée (Ciss) (Max) @ Vds:17nC @ 10V
type de IGBT:±30V
Charge de la porte (Qg) (Max) @ Vgs:4V @ 1mA
Fonction FET:N-Channel
Description élargie:N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
Tension drain-source (Vdss):-
La description:MOSFET N-CH 900V 3A TO-220SIS
Courant - Drainage continu (Id) à 25 ° C:900V
Ratio de capacité:40W (Tc)
Email:[email protected]

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