SIR164DP-T1-GE3
SIR164DP-T1-GE3
Varenummer:
SIR164DP-T1-GE3
Fabrikant:
Vishay / Siliconix
Beskrivelse:
MOSFET N-CH 30V 50A PPAK SO-8
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
54073 Pieces
Leveringstid:
1-2 days
Datablad:
SIR164DP-T1-GE3.pdf

Introduktion

We can supply SIR164DP-T1-GE3, use the request quote form to request SIR164DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIR164DP-T1-GE3.The price and lead time for SIR164DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIR164DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Test:3950pF @ 15V
Spænding - Opdeling:PowerPAK® SO-8
Vgs (th) (Max) @ Id:2.5 mOhm @ 15A, 10V
Vgs (Max):4.5V, 10V
Teknologi:MOSFET (Metal Oxide)
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:50A (Tc)
Polarisering:PowerPAK® SO-8
Andre navne:SIR164DP-T1-GE3TR
SIR164DPT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:15 Weeks
Producentens varenummer:SIR164DP-T1-GE3
Inputkapacitans (Ciss) (Max) @ Vds:123nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:2.5V @ 250µA
FET-funktion:N-Channel
Udvidet beskrivelse:N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
Afløb til Source Voltage (VDSS):-
Beskrivelse:MOSFET N-CH 30V 50A PPAK SO-8
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:30V
Kapacitansforhold:5.2W (Ta), 69W (Tc)
Email:[email protected]

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