SIHF12N60E-GE3
SIHF12N60E-GE3
Varenummer:
SIHF12N60E-GE3
Fabrikant:
Vishay / Siliconix
Beskrivelse:
MOSFET N-CH 600V 12A TO220 FULLP
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
32237 Pieces
Leveringstid:
1-2 days
Datablad:
SIHF12N60E-GE3.pdf

Introduktion

We can supply SIHF12N60E-GE3, use the request quote form to request SIHF12N60E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHF12N60E-GE3.The price and lead time for SIHF12N60E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHF12N60E-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Test:937pF @ 100V
Vgs (th) (Max) @ Id:380 mOhm @ 6A, 10V
Vgs (Max):10V
Teknologi:MOSFET (Metal Oxide)
Serie:E
RoHS Status:Digi-Reel®
Rds On (Max) @ Id, Vgs:12A (Tc)
Polarisering:TO-220-3 Full Pack
Andre navne:SIHF12N60E-GE3DKR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:19 Weeks
Producentens varenummer:SIHF12N60E-GE3
Inputkapacitans (Ciss) (Max) @ Vds:58nC @ 10V
IGBT Type:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET-funktion:N-Channel
Udvidet beskrivelse:N-Channel 600V 12A (Tc) 33W (Tc) Through Hole
Afløb til Source Voltage (VDSS):-
Beskrivelse:MOSFET N-CH 600V 12A TO220 FULLP
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:600V
Kapacitansforhold:33W (Tc)
Email:[email protected]

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