Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Spænding - Test: | 2415pF @ 100V |
Spænding - Opdeling: | D2PAK |
Vgs (th) (Max) @ Id: | 180 mOhm @ 11A, 10V |
Vgs (Max): | 10V |
Teknologi: | MOSFET (Metal Oxide) |
Serie: | - |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs: | 22A (Tc) |
Polarisering: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andre navne: | SIHB22N65E-GE3TR |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 19 Weeks |
Producentens varenummer: | SIHB22N65E-GE3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 110nC @ 10V |
IGBT Type: | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 4V @ 250µA |
FET-funktion: | N-Channel |
Udvidet beskrivelse: | N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK |
Afløb til Source Voltage (VDSS): | - |
Beskrivelse: | MOSFET N-CH 650V 22A D2PAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 650V |
Kapacitansforhold: | 227W (Tc) |
Email: | [email protected] |