Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Spænding - Test: | 13000pF @ 10V |
Spænding - Opdeling: | 10-PolarPAK® (L) |
Vgs (th) (Max) @ Id: | 1.4 mOhm @ 25A, 10V |
Teknologi: | MOSFET (Metal Oxide) |
Serie: | TrenchFET® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs: | 60A (Tc) |
Polarisering: | 10-PolarPAK® (L) |
Andre navne: | SIE810DF-T1-E3TR SIE810DFT1E3 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 24 Weeks |
Producentens varenummer: | SIE810DF-T1-E3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 300nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 2V @ 250µA |
FET-funktion: | N-Channel |
Udvidet beskrivelse: | N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
Afløb til Source Voltage (VDSS): | - |
Beskrivelse: | MOSFET N-CH 20V 60A 10-POLARPAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20V |
Kapacitansforhold: | 5.2W (Ta), 125W (Tc) |
Email: | [email protected] |