SIE810DF-T1-E3
SIE810DF-T1-E3
Varenummer:
SIE810DF-T1-E3
Fabrikant:
Vishay / Siliconix
Beskrivelse:
MOSFET N-CH 20V 60A 10-POLARPAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
54923 Pieces
Leveringstid:
1-2 days
Datablad:
SIE810DF-T1-E3.pdf

Introduktion

We can supply SIE810DF-T1-E3, use the request quote form to request SIE810DF-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIE810DF-T1-E3.The price and lead time for SIE810DF-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIE810DF-T1-E3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Test:13000pF @ 10V
Spænding - Opdeling:10-PolarPAK® (L)
Vgs (th) (Max) @ Id:1.4 mOhm @ 25A, 10V
Teknologi:MOSFET (Metal Oxide)
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:60A (Tc)
Polarisering:10-PolarPAK® (L)
Andre navne:SIE810DF-T1-E3TR
SIE810DFT1E3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:24 Weeks
Producentens varenummer:SIE810DF-T1-E3
Inputkapacitans (Ciss) (Max) @ Vds:300nC @ 10V
Gate Charge (Qg) (Max) @ Vgs:2V @ 250µA
FET-funktion:N-Channel
Udvidet beskrivelse:N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Afløb til Source Voltage (VDSS):-
Beskrivelse:MOSFET N-CH 20V 60A 10-POLARPAK
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:20V
Kapacitansforhold:5.2W (Ta), 125W (Tc)
Email:[email protected]

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