SI3900DV-T1-E3
SI3900DV-T1-E3
Varenummer:
SI3900DV-T1-E3
Fabrikant:
Vishay / Siliconix
Beskrivelse:
MOSFET 2N-CH 20V 2A 6-TSOP
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
70667 Pieces
Leveringstid:
1-2 days
Datablad:
SI3900DV-T1-E3.pdf

Introduktion

We can supply SI3900DV-T1-E3, use the request quote form to request SI3900DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3900DV-T1-E3.The price and lead time for SI3900DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3900DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Test:-
Spænding - Opdeling:6-TSOP
Vgs (th) (Max) @ Id:125 mOhm @ 2.4A, 4.5V
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:2A
Strøm - Max:830mW
Polarisering:SOT-23-6 Thin, TSOT-23-6
Andre navne:SI3900DV-T1-E3TR
SI3900DVT1E3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:15 Weeks
Producentens varenummer:SI3900DV-T1-E3
Inputkapacitans (Ciss) (Max) @ Vds:4nC @ 4.5V
Gate Charge (Qg) (Max) @ Vgs:1.5V @ 250µA
FET-funktion:2 N-Channel (Dual)
Udvidet beskrivelse:Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Afløb til Source Voltage (VDSS):Logic Level Gate
Beskrivelse:MOSFET 2N-CH 20V 2A 6-TSOP
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:20V
Email:[email protected]

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