Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Spænding - Test: | - |
Spænding - Opdeling: | 6-TSOP |
Vgs (th) (Max) @ Id: | 125 mOhm @ 2.4A, 4.5V |
Serie: | TrenchFET® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs: | 2A |
Strøm - Max: | 830mW |
Polarisering: | SOT-23-6 Thin, TSOT-23-6 |
Andre navne: | SI3900DV-T1-E3TR SI3900DVT1E3 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 15 Weeks |
Producentens varenummer: | SI3900DV-T1-E3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 4nC @ 4.5V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5V @ 250µA |
FET-funktion: | 2 N-Channel (Dual) |
Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
Afløb til Source Voltage (VDSS): | Logic Level Gate |
Beskrivelse: | MOSFET 2N-CH 20V 2A 6-TSOP |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20V |
Email: | [email protected] |