SI7326DN-T1-GE3
SI7326DN-T1-GE3
Artikelnummer:
SI7326DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET N-CH 30V 6.5A PPAK 1212-8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
76232 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI7326DN-T1-GE3.pdf

Einführung

We can supply SI7326DN-T1-GE3, use the request quote form to request SI7326DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7326DN-T1-GE3.The price and lead time for SI7326DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7326DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Prüfung:-
Spannung - Durchschlag:PowerPAK® 1212-8
VGS (th) (Max) @ Id:19.5 mOhm @ 10A, 10V
Technologie:MOSFET (Metal Oxide)
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:6.5A (Ta)
Polarisation:PowerPAK® 1212-8
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsstufe (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:15 Weeks
Hersteller-Teilenummer:SI7326DN-T1-GE3
Eingabekapazität (Ciss) (Max) @ Vds:13nC @ 5V
Gate Charge (Qg) (Max) @ Vgs:1.8V @ 250µA
FET-Merkmal:N-Channel
Expanded Beschreibung:N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Drain-Source-Spannung (Vdss):-
Beschreibung:MOSFET N-CH 30V 6.5A PPAK 1212-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:30V
Kapazitätsverhältnis:1.5W (Ta)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung