DMNH10H028SPSQ-13
DMNH10H028SPSQ-13
Artikelnummer:
DMNH10H028SPSQ-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-CH 100V 40A POWERDI506
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
21524 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMNH10H028SPSQ-13.pdf

Einführung

We can supply DMNH10H028SPSQ-13, use the request quote form to request DMNH10H028SPSQ-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMNH10H028SPSQ-13.The price and lead time for DMNH10H028SPSQ-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMNH10H028SPSQ-13.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Prüfung:2245pF @ 50V
Spannung - Durchschlag:PowerDI5060-8
VGS (th) (Max) @ Id:28 mOhm @ 20A, 10V
Vgs (Max):10V
Technologie:MOSFET (Metal Oxide)
Serie:-
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:40A (Tc)
Polarisation:8-PowerTDFN
Andere Namen:DMNH10H028SPSQ-13DITR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsstufe (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:16 Weeks
Hersteller-Teilenummer:DMNH10H028SPSQ-13
Eingabekapazität (Ciss) (Max) @ Vds:36nC @ 10V
IGBT-Typ:±20V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET-Merkmal:N-Channel
Expanded Beschreibung:N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8
Drain-Source-Spannung (Vdss):-
Beschreibung:MOSFET N-CH 100V 40A POWERDI506
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:100V
Kapazitätsverhältnis:1.6W (Ta)
Email:[email protected]

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